TORRANCE, Calif., Aug. 23, 2023 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), announced that it will reveal a new, high-performance wide bandgap power platform as part of its display at one of Asia’s most prestigious electronics exhibitions – sponsored by Navitas - SEMICON Taiwan 2023, from September 6th-8th.
Visitors will discover the latest gallium nitride (GaN) GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions.
Additionally, Navitas will showcase cutting-edge, power-system platforms to dramatically accelerate customer developments, minimize time-to-market, and set new industry benchmarks in energy efficiency, power density and system cost. These system platforms include complete design collateral with fully-tested hardware, embedded software, schematics, bill-of-materials, layout, simulation and hardware test results. Examples include:
- Navitas’ CRPS185 data center power platform, that delivers a full 3,200 W of power in only 1U (40 mm) x 73.5mm x 185 mm (544 cc), achieving 5.9 W/cc, or almost 100 W/in3 power density. This is a 40% size reduction vs, the equivalent legacy silicon approach and reaches over 96.5% efficiency at 30% load, and over 96% stretching from 20% to 60% load, creating a ‘Titanium Plus’ benchmark.
- Navitas’ 6.6 kW 3-in-1 bi-directional EV on-board charger (OBC) with 3 kW DC-DC. This 96%+ efficient unit has over 50% higher power density, and with efficiency over 95%, delivers up to 16% energy savings as compared to competing solutions.
As part of SEMICON’s Power and Opto Semiconductor Forum, Navitas’ Charles Bailley, Senior Director of Business Development, will present “GaN Power ICs Increase Power Density in EV Power Systems”. The presentation is at 2pm, on September 6th, in room 402, 4F, TaiNEX 1.
“Breakthrough high efficiency, high reliability, and high power density – all from the new GaN power IC platform,” said Kevin 汪時民 Wang, Manager of Navitas Taiwan. "The new platform announcement matches SEMICON’s theme of 'Innovating the World through Semiconductors' and our own mission to 'Electrify Our World™’."
SEMICON Taiwan runs from September 6th –8th, 2023 at the Nangang Exhibition Center, TaiNEX Hall 1 and 2 in Taipei, Taiwan. Arrange a meeting with Navitas experts via email@example.com or visit Hall 1, booth J2238.
Navitas Semiconductor (Nasdaq: NVTS) is the only pure-play, next-generation power-semiconductor company, founded in 2014. GaNFast™ power ICs integrate gallium nitride (GaN) power and drive, with control, sensing, and protection to enable faster charging, higher power density, and greater energy savings. Complementary GeneSiC™ power devices are optimized high-power, high-voltage, and high-reliability silicon carbide (SiC) solutions. Focus markets include EV, solar, energy storage, home appliance / industrial, data center, mobile and consumer. Over 185 Navitas patents are issued or pending. Over 100 million GaN and 12 million SiC units have been shipped, and with the industry’s first and only 20-year GaNFast warranty. Navitas was the world’s first semiconductor company to be CarbonNeutral®-certified.
Navitas Semiconductor, GaNFast, GeneSiC and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited and affiliates. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Stephen Oliver, VP Corporate Marketing & Investor Relations, firstname.lastname@example.org.
A photo accompanying this announcement is available at https://www.globenewswire.com/NewsRoom/AttachmentNg/d9a64d14-7fa0-4ba4-94d2-b6350231e0dd